63-4866-63 ［Discontinued］IRF7343PBF Dual N/P-Channel MOSFET, 3.4 A, 4.7 A, 55 V HEXFET, 8-Pin SOIC Infineon IRF7343PBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity：1piece
- Channel Type : N, P
- Maximum Continuous Drain Current : 3.4 A, 4.7 A
- Maximum Drain Source Voltage : 55 V
- Maximum Drain Source Resistance : 50 mΩ, 105 mΩ
- Maximum Gate Threshold Voltage : 1V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Dimensions : 5 x 4 x 1.5mm
- CODE No.:541-1770
| Order No. | 63-4866-63 | |
|---|---|---|
| Model No. | IRF7343PBF | |
| Standard price |
JPY: 100
USD: 0.62
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
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| Stock in Japan | - | |