63-4866-62 ［Discontinued］IRF7342PBF Dual P-Channel MOSFET, 3.4 A, 55 V HEXFET, 8-Pin SOIC Infineon IRF7342PBF
Features
- Dual P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.
Spec
- Quantity：1piece
- Channel Type : P
- Maximum Continuous Drain Current : 3.4 A
- Maximum Drain Source Voltage : 55 V
- Maximum Drain Source Resistance : 105 mΩ
- Maximum Gate Threshold Voltage : 1V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Typical Turn-On Delay Time : 14 ns
- CODE No.:541-1764
| Order No. | 63-4866-62 | |
|---|---|---|
| Model No. | IRF7342PBF | |
| Standard price |
JPY: 130
USD: 0.82
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |