63-4866-56 [Discontinued]IRFD120PBF N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF
Features
- N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 1.3 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 270 mΩ
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : HVMDIP
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.3 W
- Dimensions : 5 x 6.29 x 3.37mm
- CODE No.:541-1691
| Order No. | 63-4866-56 | |
|---|---|---|
| Model No. | IRFD120PBF | |
| Standard price |
JPY: 410
USD: 2.57
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]IRFD120PBF N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF](https://aimg.as-1.co.jp/c/63/4866/56/63486656.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)