63-4866-30 IRFBE30PBF N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF
Features
- N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 4.1 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 3 Ω
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Number of Elements per Chip : 1
- CODE No.:541-1124
| Order No. | 63-4866-30 | |
|---|---|---|
| Model No. | IRFBE30PBF | |
| Standard price |
JPY: 450
USD: 2.82
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|