QuoteQuotes="init"> 63-4866-17 IRF9530NPBF P-Channel MOSFET, 14 A, 100 V HEXFET, 3-Pin TO-220AB Infineon IRF9530NPBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-4866-17 IRF9530NPBF P-Channel MOSFET, 14 A, 100 V HEXFET, 3-Pin TO-220AB Infineon IRF9530NPBF Infineon 63-4866-17 IRF9530NPBF P-Channel MOSFET, 14 A, 100 V HEXFET, 3-Pin TO-220AB Infineon IRF9530NPBF 印刷 PDF 特徴 P-Channel Power MOSFET 100V to 150V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. 仕様 Quantity：1piece Channel Type : P Maximum Continuous Drain Current : 14 A Maximum Drain Source Voltage : 100 V Maximum Drain Source Resistance : 200 mΩ Maximum Gate Threshold Voltage : 4V Minimum Gate Threshold Voltage : 2V Maximum Gate Source Voltage : -20 V, +20 V Package Type : TO-220AB Mounting Type : Through Hole Transistor Configuration : Single Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 79 W Typical Input Capacitance @ Vds : 760 pF@ 25 V CODE No.:541-0828 アズワン品番 63-4866-17 型番 IRF9530NPBF 標準価格 JPY: 280 USD: 1.74 Excange rate 1USD= 160.72JPYValid price in Japan 入り数 1piece 在庫数 サプライヤ在庫 お見積もり Other Requests
お見積もり
Other Requests
