63-4800-53 [Discontinued]SPP20N60C3HKSA1 N-Channel MOSFET, 21 A, 600 V CoolMOS C3, 3-Pin TO-220AB Infineon SPP20N60C3HKSA1
Features
- Infineon CoolMOS™C3 Power MOSFET
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 21 A
- Maximum Drain Source Voltage : 600 V
- Maximum Drain Source Resistance : 190 mΩ
- Maximum Gate Threshold Voltage : 3.9V
- Minimum Gate Threshold Voltage : 2.1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Maximum Power Dissipation : 208 W
- Typical Gate Charge @ Vgs : 87 nC @ 10 V
- CODE No.:462-3376
| Order No. | 63-4800-53 | |
|---|---|---|
| Model No. | SPP20N60C3HKSA1 | |
| Standard price |
JPY: 700
USD: 4.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]SPP20N60C3HKSA1 N-Channel MOSFET, 21 A, 600 V CoolMOS C3, 3-Pin TO-220AB Infineon SPP20N60C3HKSA1](https://aimg.as-1.co.jp/c/63/4800/53/63480053.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)