63-4796-02 BSP89H6327XTSA1 N-Channel MOSFET, 350 mA, 240 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP89H6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 350 mA
- Maximum Drain Source Voltage : 240 V
- Maximum Drain Source Resistance : 6 Ω
- Maximum Gate Threshold Voltage : 1.8V
- Minimum Gate Threshold Voltage : 0.8V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Small Signal
- Maximum Power Dissipation : 1.8 W
- Typical Turn-Off Delay Time : 15.9 ns
- CODE No.:445-2281
| Order No. | 63-4796-02 | |
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| Model No. | BSP89H6327XTSA1 | |
| Standard price |
JPY: 500
USD: 3.11
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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