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Infineon

63-4796-02　BSP89H6327XTSA1 N-Channel MOSFET, 350 mA, 240 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon　BSP89H6327XTSA1

Features

  • Infineon SIPMOS® N-Channel MOSFETs

仕様

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 350 mA
  • Maximum Drain Source Voltage : 240 V
  • Maximum Drain Source Resistance : 6 Ω
  • Maximum Gate Threshold Voltage : 1.8V
  • Minimum Gate Threshold Voltage : 0.8V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-223
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Small Signal
  • Maximum Power Dissipation : 1.8 W
  • Typical Turn-Off Delay Time : 15.9 ns
  • CODE No.:445-2281
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Order No. 63-4796-02
型番 BSP89H6327XTSA1
Standard price JPY: 500 USD: 3.11
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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