63-4764-90 [Discontinued]RFD14N05L N-Channel MOSFET, 14 A, 50 V, 3-Pin IPAK ON Semiconductor RFD14N05L
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 14 A
- Maximum Drain Source Voltage : 50 V
- Maximum Drain Source Resistance : 100 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -10 V, +10 V
- Package Type : IPAK (TO-251)
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 48 W
- Typical Turn-Off Delay Time : 42 ns
- CODE No.:325-7580
| Order No. | 63-4764-90 | |
|---|---|---|
| Model No. | RFD14N05L | |
| Standard price |
JPY: 100
USD: 0.62
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]RFD14N05L N-Channel MOSFET, 14 A, 50 V, 3-Pin IPAK ON Semiconductor RFD14N05L](https://aimg.as-1.co.jp/c/63/4764/90/63476490.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)