63-4695-22 ［Discontinued］SCT2H12NYTB SiC N-Channel MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268 ROHM SCT2H12NYTB
Spec
- Quantity：1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 4 A
- Maximum Drain Source Voltage : 1700 V
- Maximum Drain Source Resistance : 1.71 Ω
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 1.6V
- Maximum Gate Source Voltage : 22 V
- Package Type : TO-268
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 44 W
- Dimensions : 15.95 x 13.9 x 5mm
- CODE No.:150-1510
| Order No. | 63-4695-22 | |
|---|---|---|
| Model No. | SCT2H12NYTB | |
| Standard price |
JPY: 1,290
USD: 8.09
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |