63-4695-13 SCT3120ALGC11 SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 21 A
- Maximum Drain Source Voltage : 650 V
- Maximum Drain Source Resistance : 158.4 mΩ
- Maximum Gate Threshold Voltage : 5.6V
- Minimum Gate Threshold Voltage : 2.7V
- Maximum Gate Source Voltage : 22 V
- Package Type : TO-247N
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 103 W
- Number of Elements per Chip : 1
- CODE No.:150-1488
| Order No. | 63-4695-13 | |
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| Model No. | SCT3120ALGC11 | |
| Standard price |
JPY: 1,840
USD: 11.53
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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