63-4682-13 IXFN200N10P N-Channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B IXYS IXFN200N10P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 200 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 7.5 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-227B
- Mounting Type : Surface Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 680 W
- Maximum Operating Temperature : +175 °C
- CODE No.:125-8040
| Order No. | 63-4682-13 | |
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| Model No. | IXFN200N10P | |
| Standard price |
JPY: 6,120
USD: 38.08
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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